Temperature Dependences of the Nonradiative Multiphonon Carrier Capture and Ejection Properties of Deep Traps in Semiconductors
Temperature Dependences of the Nonradiative Multiphonon Carrier Capture and Ejection Properties of Deep Traps in Semiconductors
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半导体深陷阱非辐射多声子载流子捕获和喷射特性的温度依赖性
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发表时间：
1978
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通讯作者：
R. Passler
中科院分区：
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作者：
R. Passler
本文从新近发展起来的Shockley-Read过程半经验理论出发，对半导体中深陷阱的无辐射多声子载流子俘获和发射特性的温度依赖性作了一个简短的理论预测。在低温下，相应的俘获截面对温度的依赖性很弱，在吸引、中性和排斥的情况下分别为T-1、T-112和T-716~ xexp { -3[O/T]1/3}，其中参数δ取决于中心电荷的大小。在高温下，激活类型依赖性exp { - U/kT}起着重要的作用，其中激活能U取决于给定陷阱的实际结构。在完整理论的基础上，用图形显示了中温范围内俘获截面和喷射频率因子随温度的变化关系。I/ICXOncIH3HeAaBHO IIOJlyqeHHOfHPMHIIOJly3MIIMpJPleCKOfiTeOpHH IlpOUeCCO B mOKJIIIPEIna，MbIIIpeRJXaraeMKPaTKMd0630 ~ TeOpeTM4eCKHX IlpenCCa3aHHb TeMIIepaTypHbIXHOrO 3aXBaTa EI ~ 6pocaHOCHTenefiTOKa my60 ~ mUeHTpaMH B IIOJlyIIpOBOnHHKaX. nPII HH3 KIIX TeMIIepaTypaX COOTBeTCTByIoqHe CeqeHIIfi 3aXBaTa 3aBHCFIT JIUUUlB cna6o OT TeMIIIoT @ Typbl M B CJlgqaHX IlPUTR1 'IIBaHMFI，HefiTpaJibHOCTU kI OTTaJIKHBaHHfl OHW COOTBETCTBeHHO IIpOIOpUHOHanbHbI T-'，T-112 M T-71' exp {-3\f8/T]113}，IIpMqeM napaMeTp 0 3aBMCUT OT BeJIHqAHbI 3apHUa UeHTpa。NpH BbICOKClX TemnepaTypaX BBXHYIO p0nb ArpaIoT 3aBIICUMOCTU aKTklBa4MOHHOVO THna eXp（- U/hT），me 3HeprHM aKTklBaUUEI u 3aBllCRT OT KOHHHpeThOfi CTPYKTYpbI IIaHHbIX UeHTpOB. Ha OCHOBe IlOJIHOfi TeOpllM MbI H306pa3IIM rpa@IIqeCKEI TeMIIepaTypHble 3aBMCIIMOCTM CeseHMB 3aXBaTa II qaCTOTHBIX MHOWMTene# sb16poca HOCMTeJlefi TOKa B o6nac~a CpenHClX TeMIIepaTyp. aasmc~~oc~efi BemwHH，xapa~~ep~3ylou11 x npoueccbr 6e3~3nyqa~enb~or o MHoro@oHoH
Proceeding from the recently developed semiempirical theory of Shockley-Read processes a short survey of theoretical predictions is given on the temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. At low temperatures the corresponding capture cross-sections are but weakly dependent on temperature and vary in the cases of attraction, neutrality, and repulsion as T-l, T-112, and T-716~ x exp { -3[O/T]1/3}, respectively, where the parameter 8 depends on the magnitude of the centre charge. At high temperatures, activation-type dependences exp { - U/kT} play an important part where the activation energies U depend on the actual structure of the given traps. On the basis of the complete theory the temperature dependences of the capture cross-sections and ejection frequency factors in the range of intermediate temperatures are visualized graphically. I/ICXOncI H3 HeAaBHO IIOJlyqeHHOfi HPMH IIOJIy3MIIMpJPleCKOfi TeOpHH IlpOUeCCOB mOKJIIIPEIna, MbI IIpeRJXaraeM KPaTKMd 0630~ TeOPeTM4eCKHX IlpenCKa3aHHb TeMIIepaTypHbIX HOrO 3aXBaTa EI ~~6poca HOCHTenefi TOKa my6o~~m UeHTpaMH B IIOJlyIIpOBOnHHKaX. nPII HH3KIIX TeMIIepaTypaX COOTBeTCTByIoqHe CeqeHIIfi 3aXBaTa 3aBHCFIT JIUUlb cna6o OT TeMIIepaTypbl M B CJlgqaHX IlPUTRl’IIBaHMFI, HefiTpaJIbHOCTU kI OTTaJIKHBaHHfl OHW COOTBeTCTBeHHO IIpOIlOpUHOHanbHbI T-’, T-112 M T-71’ exp { -3[8/T]113}, IIpMqeM napaMeTp 0 3aBMCUT OT BeJIHqAHbI 3apHUa UeHTpa. npH BbICOKClX TeMnepaTypaX BBXHYIO p0nb ArpaIoT 3aBIICUMOCTU aKTklBa4MOHHOVO THna eXp { - U/hT), me 3HeprHM aKTklBaUUEI u 3aBllCRT OT KOHHpeTHOfi CTPYKTYpbI IIaHHbIX UeHTpOB. Ha OCHOBe IlOJIHOfi TeOpllM MbI H306pa3IIM rpa@IIqeCKEI TeMIIepaTypHble 3aBMCIIMOCTM CeseHMB 3aXBaTa II qaCTOTHbIX MHOWMTene# sb16poca HOCMTeJlefi TOKa B o6nac~a CpenHClX TeMIIepaTyp. aasmc~~~oc~efi BemwHH, xapa~~ep~3ylou11 x npoueccbr 6e3~3nyqa~enb~or o MHoro@oHoH