Scanning Internal-Photoemission Microscopy: New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
Scanning Internal-Photoemission Microscopy: New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
复制标题
扫描内部光电发射显微镜：表征金属-半导体界面电不均匀性的新绘图技术
DOI：
10.1143/jjap.28.l1108
复制
发表时间：
1989
影响因子：
1.5
通讯作者：
K. Shiojima
中科院分区：
文献类型：
--
作者：
T. Okumura;K. Shiojima
提出了一种新的映射技术，称为扫描内光电发射显微镜，用于表征金属-半导体界面的电学不均匀性。为了获得肖特基势垒高度的图像，我们使用了两束1 µm波段的激光束，其中Si和GaAs衬底是透明的，因此所提出的技术能够直接探测金属-半导体界面。这种显微镜的能力已被证明是通过可视化的平行接触与两种不同的金属，机械损伤的存在，和一个厚金属下埋的dielectric层。
A new mapping technique, termed scanning internal-photoemission microscopy, has been presented to characterize the electrical inhomogeneity of metal-semiconductor interfaces. To obtain images of a Schottky barrier height, we have used two laser beams in a 1 µm band for which Si and GaAs substrates are transparent, and thus the proposed technique has been capable of probing the metal-semiconductor interfaces directly. The capability of this microscopy has been demonstrated by visualizing the parallel contact with two different metals, the existence of mechanical damage, and an ultrathin layer buried beneath a thick metal.