Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs
Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs
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DOI：
10.1109/led.2015.2497666
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发表时间：
2016
影响因子：
4.9
通讯作者：
P. Long;Evan Wilson;Jun Z. Huang;Gerhard Klimeck;M. Rodwell;M. Povolotskyi
中科院分区：
文献类型：
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作者：
P. Long;Evan Wilson;Jun Z. Huang;Gerhard Klimeck;M. Rodwell;M. Povolotskyi
本文描述了在InAs沟道中使用GaSb电子波反射器的双栅InAs/GaSb隧穿场效应晶体管的设计。来自源p-n结和来自反射器的反射相消地相加，导致净透射在某些能量下接近1。通过适当地布置多个势垒，可以拓宽透射增强的能量范围。在关断电流为10-3 A/m、电源电压为0.3 V时，亚阈值摆幅从14.4 mV/decade提高到4.6 mV/decade，导通电流从35 A/m提高到96 A/m。
We describe the design of double-gate InAs/GaSb tunneling field-effect transistors (TFETs) using GaSb electron wave reflector(s) in the InAs channel. The reflections from the source p-n junction and from the reflector(s) add destructively, causing the net transmission to approach unity at certain energies. The energy range of transmission enhancement can be broadened by the appropriate placement of multiple barriers. With 10-3 A/m OFF-current (IOFF) and a 0.3 V power supply, the subthreshold swing is improved from 14.4 to 4.6 mV/decade and the ON-current (ION) is improved from 35 to 96 A/m, compared with a conventional GaSb/InAs TFET.