Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence
Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence
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DOI：
10.1063/1.4986497
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发表时间：
2017-06
影响因子：
3.2
通讯作者：
Yasuhiro Isobe;H. Hung;Kohei Oasa;T. Ono;T. Onizawa;A. Yoshioka;Y. Takada;Y. Saito;N. Sugiyama;K. Tsuda;T. Sugiyama;I. Mizushima
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作者：
Yasuhiro Isobe;H. Hung;Kohei Oasa;T. Ono;T. Onizawa;A. Yoshioka;Y. Takada;Y. Saito;N. Sugiyama;K. Tsuda;T. Sugiyama;I. Mizushima
采用截面阴极发光法（X-CL）对高电子迁移率晶体管（HEMT）结构中的GaN薄膜进行缺陷分析，研究了晶体质量与器件特性之间的关系。本征GaN（i-GaN）和碳掺杂GaN的晶体质量产生明显不同的蓝色发光（BL）、黄色发光（YL）和带边发射（BE）的峰值强度，其通过X-CL独立地检测。发现GaN-HEMT器件中的电流崩塌由i-GaN层顶部的BL/BE和YL/BE比决定，i-GaN层顶部靠近沟道。此外，可以通过X-CL来评估为了使BL/BE和YL/BE比最小化所需的i-GaN厚度以及取决于生长条件的用于使BL/BE和YL/BE比最小化的GaN的厚度依赖性。然而，在GaN-HEMT器件中的电流崩塌和YL之间没有相关性。
Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL...