Power electronics on InAlN/(In)GaN:: Prospect for a record performance
Power electronics on InAlN/(In)GaN:: Prospect for a record performance
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DOI：
10.1109/55.962646
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发表时间：
2001-11-01
影响因子：
4.9
通讯作者：
Kuzmík, J
中科院分区：
文献类型：
--
作者：
Kuzmík, J
我们将Al0.2Ga0.8N/GaN量子阱的基本物理参数分别与In0.17Al0.83N/GaN和In0.17Al0.83N/In0.10Ga0.90N量子阱参数进行了比较。结果表明，与传统的AlGaN/GaN方法相比，基于InAlN/（In）GaN的结构应表现出两到三倍高的量子阱极化诱导电荷。采用高电子迁移率晶体管（HEMT）的解析模型计算了InAlN/（In）GaN HEMT的漏电流和跨导。计算了In0.17Al0.83N/In0.10Ga（0.90）N和In0.17Al0.83N/GaN HEMT的漏电流分别为3.3A/mm和2.2A/mm。与AlGaN/GaN HEMT相比，这代表了高达205%的电流增加，并且可以预期新结构的创纪录功率性能。
We compare basic physical parameters of Al0.2Ga0.8N/GaN quantum well with In0.17Al0.83N/GaN and In0.17Al0.83N/In0.10Ga0.90N quantum well parameters, respectively. It is shown that in comparison to conventional AlGaN/GaN approach, structures based on InAIN/(In)GaN should exhibit two to three times higher quantum well polarization-induced charge. We use high electron mobility transistors (HEMT) analytical model to calculate InAIN/(In)GaN HEMTs drain currents and transconductances. A 3.3 A/mm and 2.2 A/mm drain current was calculated for In0.17Al0.83N/In0.10Ga(0.90)N and In0.17Al0.83N/GaN HEMTs, respectively. This represents up to 205% current increase if compared with AlGaN/GaN HEMT and a record power performance can be expected for new structures.