Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
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DOI：
10.1109/iedm.2010.5703400
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发表时间：
2010-12
期刊：
影响因子：
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通讯作者：
H. Umeda;Asamira Suzuki;Y. Anda;M. Ishida;T. Ueda;Tsuyoshi Tanaka;D. Ueda
中科院分区：
文献类型：
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作者：
H. Umeda;Asamira Suzuki;Y. Anda;M. Ishida;T. Ueda;Tsuyoshi Tanaka;D. Ueda
提出了一种通过加宽高阻Si衬底中的耗尽层来提高AlGaN/GaN异质结场效应晶体管（HFET）阻断电压的新技术。阻断电压提升（BVB）技术利用离子注入在芯片的外围区域作为沟道阻挡层，以终止从AlN/Si的界面反型层的漏电流。在沟道阻挡层的帮助下，耗尽层在衬底中加宽，这增加了HFET的阻断电压。通过BVB技术，HFET的关态击穿电压从760 V提高到1340 V，而没有Si上薄至1.4µm的外延GaN的沟道阻挡层。这种技术大大有助于提高即使是在Si上的薄外延GaN的阻断电压，这导致进一步降低的制造成本。
We propose a novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate. The blocking-voltage boosting (BVB) technology utilizes ion implantation at the peripheral area of the chip as channel stoppers to terminate the leakage current from the interfacial inversion layers at AlN/Si. A depletion layer is widened in the substrate by the help of the channel stopper, which increases the blocking voltage of the HFET. The off-state breakdown voltage of the HFETs is increased up to 1340V by the BVB technology from 760V without the channel stoppers for the epitaxial GaN as thin as 1.4µm on Si. This technology greatly helps to increase the blocking voltage even for thin epitaxial GaN on Si, which leads to further reduction of the fabrication cost.