CONTRIBUTION OF SPONTANEOUS EMISSION TO THE LINEWIDTH OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
CONTRIBUTION OF SPONTANEOUS EMISSION TO THE LINEWIDTH OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
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DOI：
10.1049/el:19850443
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发表时间：
1985-01-01
影响因子：
1.1
通讯作者：
CHABRAN, C
中科院分区：
文献类型：
--
作者：
GALLION, P;NAKAJIMA, H;CHABRAN, C
我们证明了注入锁定半导体激光器内部的自发辐射不改变激光场。对于在自由运行频率下的注入，线宽仅由注入场相位噪声支配，并且可能不再遵循Schawlow-Townes依赖于发射光功率。
We show that the spontaneous emission inside an injection-locked semiconductor laser does not alter the lasing field. For injection at the free-running frequency, the linewidth is only governed by the injected-field phase noise and may no longer follow the Schawlow-Townes dependence on emitted optical power.