Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors
Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors
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DOI：
10.1088/0957-4484/25/30/305702
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发表时间：
2014-08-01
期刊：
影响因子：
3.5
通讯作者：
Gotsmann, B.
中科院分区：
文献类型：
--
作者：
Karg, S. F.;Troncale, V.;Gotsmann, B.
精确测量一套完整的热电参数上的一个单一的砷化铟纳米线（NW）已进行使用高灵敏度，微制造的传感装置的基础上的加热器/传感器的原则。该设备被制造成微机电系统，由氮化硅膜结构与电阻金加热器/传感器。详细描述了器件的制备、操作和表征。加热器/传感器平台的热去耦已被优化，达到低至20 N W K-1的热导率与测量灵敏度低于0.2 N W K-1。InAs纳米线的特点是在热导率，四探针电导和热电（塞贝克系数），所有测量一个单一的NW。在200-350 K范围内获得了确定InAs NW的热电优值的参数的温度依赖性，其特征在于热导率从2.7 W（m K）（-1）略微降低到2.3 W（m K）（-1）。
Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 n W K-1 with a measurements sensitivity below 0.2 n W K-1. The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W(m K)(-1) to 2.3 W(m K)(-1).