Effects of Ag addition on the structural and electrical properties of La0.67Sr0.33MnO3 ceramics
Effects of Ag addition on the structural and electrical properties of La0.67Sr0.33MnO3 ceramics
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Ag添加对La0.67Sr0.33MnO3陶瓷结构和电性能的影响
DOI:
10.1080/17436753.2016.1265755
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发表时间:
2017-04
影响因子:
2.2
通讯作者:
Liu Xiang
中科院分区:
文献类型:
--
作者:
Zhao Shuang;Yue Xue-Jiao;Yan Yi-Zhi;Liu Xiang
La0.67Sr0.33MnO3:mol-%Ag x (LSMO:Ag x , x = 0, 0.1, 0.2, 0.3 and 0.4) polycrystalline ceramics were prepared by chemical co-precipitation methods. All of the LSMO:Ag x samples showed rhombohedral perovskite structure with a space group of . The diffraction peaks of metallic Ag did not appear in the XRD graph, due to the Ag substitution at A sites (La3+ or Sr2+ ions) and the evaporation loss of the element Ag in the process of high-temperature sintering, or the residual amount of Ag beyond the sensitivity of the XRD. With the increase of Ag addition, unit cell volume (V), metal−insulator transition temperature (Tp) and conductivity at Tp (ρTp) of the LSMO:Ag x samples increased significantly. At the same time, the temperature coefficient of resistance (TCR%), temperature peak of the TCR% (Tk) and the figure of merit (Z) reached the optimal values of 3.3% K−1, 367 K and 0.049 at x = 0.3. Ag substitution at A sites (La3+ or Sr2+ ions) and gathering at grain boundaries (GBs) were proposed to explain the existence of Ag addition. All results suggested that the enhancement of electrical properties was due to silver-doping and it increased the bond angles of Mn−O−Mn (θMn−O−Mn) and the bond distance of Mn−O (dMn−O), improving Mn4+ concentration, grain sizes and GBs connectivity in LSMO:Ag x ceramics.
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影响因子:
6.2
作者:
L. Gan;Q. Zhong;Xiaolu Zhao;Yang Song;Yunfei Bu
通讯作者:
L. Gan;Q. Zhong;Xiaolu Zhao;Yang Song;Yunfei Bu
影响因子:
8.6
作者:
Hwang, HY;Cheong, SW;Batlogg, B
通讯作者:
Batlogg, B
影响因子:
3.3
作者:
Yun-Hui Huang;Kewen Huang;F. Luo;Lian-long He;Zheming Wang;C. Liao;Chunhua Yan
通讯作者:
Yun-Hui Huang;Kewen Huang;F. Luo;Lian-long He;Zheming Wang;C. Liao;Chunhua Yan
影响因子:
2.1
作者:
V. Balamurugan;H. Kishan;E. Takayama-Muromachi
通讯作者:
V. Balamurugan;H. Kishan;E. Takayama-Muromachi
DOI:
10.1007/s10854-010-0280-y
发表时间:
2011-01
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
作者:
R. Yadav;A. Anshul;V. Shelke
通讯作者:
R. Yadav;A. Anshul;V. Shelke