EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate
EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate
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DOI：
10.1039/c3ce40802g
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发表时间：
2013-01-01
期刊：
影响因子：
3.1
通讯作者：
Tian, Yuan
中科院分区：
文献类型：
--
作者：
Shao, Yongliang;Dai, Yuanbin;Tian, Yuan
采用氢化物气相外延（HVPE）法在具有图案化SiO2掩模的衬底上生长GaN晶体。分析了HVPE-GaN的生长模式，利用电子背散射衍射（EBSD）菊池衍射图和极图确定了GaN与蓝宝石衬底之间的晶体取向关系。从异质外延结构的晶体学取向关系和晶格参数计算了晶格失配。利用EBSD方法研究了GaN晶体[001]方向沿着的取向分布。异质外延结构中的GaN应变由晶体学取向信息确定。拉曼光谱结果表明，这种生长方式有利于降低GaN中的残余应力。
A GaN crystal was grown by hydride vapor phase epitaxy (HVPE) on a substrate with patterned SiO2 masks. The growth mode of HVPE-GaN was analysed, and the crystallographic orientation relationship between GaN and the sapphire substrate was identified by electron backscatter diffraction (EBSD) Kikuchi diffraction patterns and pole figures. The lattice mismatch was calculated from the crystallographic orientation relationship of the heteroepitaxial structure and the lattice parameters. EBSD mapping was employed to investigate the disorientation distribution of GaN along the [001] direction. The GaN strain in the heteroepitaxial structure was identified from the crystallographic orientation information. Raman spectrum results demonstrated that the residual stress in GaN was beneficially reduced in this growth mode.