Thermally stable indium-free transparent electrode using ultrathin Ag film
Thermally stable indium-free transparent electrode using ultrathin Ag film
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使用超薄银膜的热稳定无铟透明电极
DOI：
10.1016/j.matpr.2022.06.312
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
Dhriti Sundar Ghosh
中科院分区：
文献类型：
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作者：
Arun Kumar;S. Rani;Dhriti Sundar Ghosh
在这里，我们已经证明了一种无铟透明电极（TE）的组成与氧化锌作为底涂层和外涂层的组合的铟银膜。氧化物层有助于最小化金属膜的固有反射，而银层提供导电性。利用四探针和紫外-可见分光光度计研究了该TE的电学和光学性质。在实验实现TE之前，基于传输矩阵法进行了光学模拟，以计算最佳的底涂层和外涂层氧化物层的厚度，以最小化反射损耗，并获得最高的透射率。模拟结果表明，ZnO底涂层和外涂层的厚度均为40 nm时，透射率最高。理论上和实验上获得了在可见光区（550 nm）大于90%的透过率，平均透过率大于85%，方块电阻小于6 Ω/□。这种ZnO/Ag/ZnO（ZAZ）-TE的Hackke优值和σDC/σ OP值优于市售ITO。在不同温度（200、350和500 °C）下处理沉积的TE和市售ITO以分析它们对高温的稳定性，并且已经观察到，当与ITO相比时，ZAZ显示出更好的温度稳定性。该TE的高温稳定性显示了其在包括太阳能电池在内的各种光电应用中的潜力。这种TE可以在较高温度下用于器件制造，而不会损害性能。
Here we have demonstrated an indium-free transparent electrode (TE) consisting of an ultrathin silver film in combination with zinc oxide as undercoat and overcoat layer. The oxide layers help to minimize the inherent reflection of the metal film while the silver layer provides the conductivity. Electrical and optical properties of this TE have been investigated using four probe and UV–Vis spectrophotometer. Before the experimental realization of the TE, an optical simulation based on transfer matrix method has been performed to calculate the optimum thickness of the undercoat and the overcoat oxide layer to minimize the reflection loss and to get the highest transmittance. The simulation results show that thickness equal to 40 nm for both undercoat and overcoat ZnO layer gives the highest transmittance. A transmittance value above 90% (at 550 nm) with average transmittance above 85% in the visible region has been obtained theoretically and realized experimentally along with the sheet resistance below 6 Ω/□. Hackke’s figure of merit and σDC/σOPvalues for this ZnO/Ag/ZnO (ZAZ)-TE comes out to be better than commercially available ITO. The deposited TE and commercially available ITO were treated under different temperatures (200, 350, and 500 °C) to analyse their stability towards elevated temperature and it has been observed that ZAZ shows better stability towards temperature when compared to ITO. The high-temperature stability of this TE shows its potential for various optoelectronic applications including solar cells. Such TEs can be used in device fabrication at a higher temperature without compromising performance.