Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN
Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN
复制标题
位错图案尺寸与 (0001) GaN 上的压印宽度和划痕宽度的线性相关性
DOI：
10.1088/1361-6463/ac96fd
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Tadatomo Kazuyuki
中科院分区：
文献类型：
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作者：
Ishikawa Yukari;Sugawara Yoshihiro;Yao Yongzhao;Takeda Hidetoshi;Aida Hideo;Tadatomo Kazuyuki
为了开发一种估算宽带隙半导体晶片上划痕引起的影响层厚度的方法，我们使用布氏压痕仪研究了布氏压痕（或划痕）引起的压痕（或划痕）宽度对位错图案尺寸的依赖关系。我们发现压痕法在（0001）GaN上诱导的位错花样的穿透深度和宽度约为0.001 μ m。0.9压印宽度和压印深度分别为压印宽度和压印深度的10倍和30倍。基于压印宽度和载荷的平方根（SqL）之间的线性，确定恒定硬度为0.1mN或更大。与横向扩展位错产生相比，倾斜位错产生具有较低的阈值载荷。基于压头的不完整性，讨论了这种阈值差异的原因。在0.5~7mN范围内，划痕宽度随SqL的增加而线性增加。由划痕引起的位错花样的宽度和深度约为。11 - 13和0.75 - 1倍的划痕宽度。[1]的位错斑图的宽度
With the aim of developing a method of estimating the thickness of an affected layer on a wide-bandgap semiconductor wafer caused by scratching, we investigated the dependence of dislocation pattern size on the width of the imprint (or scratch) induced by the Berkovich indentation (or scratching) using a Berkovich indenter. We found that the penetration depth and width of the dislocation pattern induced on (0001) GaN by indentation are approx. 0.9 times and 30 times that of the imprint width and the imprint depth, respectively. Based on the linearity between the imprint width and the square root of load (SqL), the constant hardness is confirmed to be 0.1 mN or more. In comparison to laterally expanding dislocation generation, inclined dislocation generation has a lower threshold load. The cause of this threshold discrepancy is discussed based on the imperfection of the indenter tip. The scratch width linearly increased with the SqL in the range of 0.5–7 mN. The width and depth of the dislocation pattern induced by the scratch are approx. 11–13 and 0.75–1 times the scratch width, respectively. The width of the dislocation pattern of the [1