Radiation response of InP/Si and InGaP/GaAs space solar cells
Radiation response of InP/Si and InGaP/GaAs space solar cells
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InP/Si 和 InGaP/GaAs 空间太阳能电池的辐射响应
DOI：
10.1016/s0927-0248(97)00161-x
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发表时间：
1998
影响因子：
6.9
通讯作者：
Y. Yeh
中科院分区：
文献类型：
--
作者：
R. Walters;H. Cotal;S. Messenger;E. Burke;S. Wojtczuk;H. Serreze;P. Sharps;M. Timmons;P. Iles;Y. Yeh
分析了InP/Si、InGaP和双结InGaP/GaAs空间太阳电池在电子和质子辐照下的辐射响应。退化数据采用位移损伤剂量理论建模。对于每种技术，确定描述在任何辐射环境中的电池退化的特征曲线，并且特征曲线用于在绝对尺度上比较不同技术的抗辐射性。辐射数据被用作预测地球轨道上太阳能电池板寿命终止（EOL）性能的代码的输入。结果表明，在地球辐射带外的轨道上，高效率的DJ InGaP/GaAs太阳电池板提供最高的EOL比功率。然而，在穿过带的轨道中，抗辐射InP/Si面板提供高达30%的最高比功率。
An analysis of the radiation response of state-of-the-art InP/Si, InGaP, and dual junction (DJ) InGaP/GaAs space solar cells under both electron and proton irradiated is presented. The degradation data are modeled using the theory of displacement damage dose. For each technology, a characteristic curve which describes the cell degradation in any radiation environment is determined, and the characteristic curves are used to compare the radiation resistance of the different technologies on an absolute scale. The radiation data are used as input to a code which predicts the end-of-life (EOL) performance of a solar panel in earth orbit. The results show that in orbits outside the earth's radiation belts, the high-efficiency DJ InGaP/GaAs solar panels provide the highest EOL specific power. However, in orbits which pass through the belts, the radiation hard InP/Si panels provide the highest specific power by as much as 30%.