Highly-Reproducible Preparation of Pb(Zr, Ti)O3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition
Highly-Reproducible Preparation of Pb(Zr, Ti)O3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition
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金属有机化学气相沉积法在低沉积温度下高重复性制备 Pb(Zr, Ti)O3 薄膜
DOI：
10.1143/jjap.42.2801
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
G. Asano;T. Oikawa;H. Funakubo
在 (111)Pt/TiO2/SiO2/Si 基底上，采用源气体脉冲引入金属有机化学气相沉积 (脉冲 MOCVD) 技术，在 395°C 下制备了多晶 Pb(Zr, Ti)O3 (PZT) 薄膜。即使在如此低的沉积温度下，也观察到相对于输入的铅源气体获得 PZT 单相的工艺窗口，并且当反应器压力从 670 Pa 降至 67 Pa 时，该工艺窗口变得更宽。这可以通过过量铅元素从薄膜表面的再蒸发加速来解释。脉冲 MOCVD 在 395°C 和 67 Pa 下的工艺窗口宽度与传统气源引入的 MOCVD 在 580°C 和 670 Pa 下的工艺窗口宽度几乎相同。 395°C 沉积的薄膜表现出良好的铁电性，剩余极化值为 29 µC/cm2。结果，即使对于通过脉冲MOCVD进行的395℃和67Pa沉积，也获得了与580℃和670Pa沉积兼容的高度再现性PZT膜沉积。
Polycrystalline Pb(Zr, Ti)O3 (PZT) films were prepared on (111)Pt/TiO2/SiO2/Si substrates at 395°C by source-gas-pulsed-introduced metal-organic chemical vapor deposition (pulsed-MOCVD). The process window for obtaining the PZT single phase relative to the input source gas of lead was observed even at this low deposition temperature and became wider when the pressure of the reactor decreased from 670 to 67 Pa. This can be explained by the acceleration of the reevaporation of excess element of lead from the surface of the film. The width of the process window at 395°C and 67 Pa by pulsed-MOCVD was almost the same at 580°C and 670 Pa by conventional-source-gas-introduced MOCVD. The film deposited at 395°C showed good ferroelectricity with the remanent polarization value of 29 µC/cm2. As a result, a highly-reproducible PZT film deposition compatible with the deposition at 580°C and 670 Pa was obtained even for the 395°C and 67 Pa deposition by pulsed-MOCVD.