Characterization of the deposition and materials parameters of thin-film TiNi for microactuators and smart materials
Characterization of the deposition and materials parameters of thin-film TiNi for microactuators and smart materials
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DOI：
10.1016/1044-5803(94)90086-8
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发表时间：
1994-04
影响因子：
4.7
通讯作者：
A. Jardine;J. Madsen;P. G. Mercado
中科院分区：
文献类型：
--
作者：
A. Jardine;J. Madsen;P. G. Mercado
由于需要在附近生长不同的活性或自适应材料，智能材料和微机电系统 (MEMS) 材料的开发变得复杂。这需要阻止不必要的化学和物理相互作用，从而阻止适当相的产生。这些系统的一个重要组成部分是薄膜形状记忆效应钛镍。本文讨论了这些应用中薄膜 TiNi 沉积的特性以及 MEMS 的循环速度。
Development of smart materials and materials for microelectromechanical systems (MEMS) are complicated by the need to grow dissimilar active or adaptive materials in close proximity. This entails discouraging unwanted chemical and physical interactions that prevent production of the appropriate phases. An important component of these systems will be thin-film shape memory effect TiNi. This article discusses the characterization of the deposition of thin film TiNi for these applications as well as the cycling speed for MEMS.