Transparent conducting oxide semiconductors for transparent electrodes
Transparent conducting oxide semiconductors for transparent electrodes
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DOI：
10.1088/0268-1242/20/4/004
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发表时间：
2005-04-01
影响因子：
1.9
通讯作者：
Minami, T
中科院分区：
文献类型：
--
作者：
Minami, T
本文介绍了用于实际薄膜透明电极的多晶或非晶态透明导电氧化物(TCO)半导体的现状和进一步发展的前景。重要的TCO半导体包括杂质掺杂的氧化锌、氧化铟和氧化锡，以及由氧化锌、氧化铟和氧化锡组合而成的多元氧化物，以及在其体系中存在的一些三元化合物。这些和其他TCO半导体的开发非常重要，因为光电子器件应用对透明电极的日益增长的需求正在危及铟锡氧化物(ITO)的可用性，其主要成分铟是一种非常昂贵和稀缺的材料。掺铝和掺镓的氧化锌(AZO和GZO)半导体作为ITO的替代材料在薄膜透明电极领域具有广阔的应用前景。特别是，AZO薄膜，具有10(-5)欧加厘米量级的低电阻率，以及廉价和无毒的源材料，是最好的候选材料。然而，需要进一步发展沉积技术，如磁控溅射或真空弧等离子体蒸发，以及靶材的进一步发展，以便能够在大面积高沉积速率的衬底上制备AZO和GZO薄膜。
The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper. The important TCO semiconductors are impurity-doped ZnO, In2O3 and SnO2 as well as multicomponent oxides consisting of combinations of ZnO, In2O3 and SnO2, including some ternary compounds existing in their systems. Development of these and other TCO semiconductors is important because the expanding need for transparent electrodes for optoelectronic device applications is jeopardizing the availability of indium-tin-oxide (ITO), whose main constituent, indium, is a very expensive and scarce material. Al- and Ga-doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity of the order of 10(-5) Omega cm and source materials that are inexpensive and non-toxic, are the best candidates. However, further development of the deposition techniques, such as magnetron sputtering or vacuum arc plasma evaporation, as well as of the targets is required to enable the preparation of AZO and GZO films on large area substrates with a high deposition rate.