Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering
Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering
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DOI：
10.1016/j.apsusc.2007.09.051
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发表时间：
2008-02-15
影响因子：
6.7
通讯作者：
Zhao, Xingzhong
中科院分区：
文献类型：
--
作者：
Ai, Lei;Fang, Guojia;Zhao, Xingzhong
在室温至 400 摄氏度的不同基底温度下，使用射频反应磁控管溅射在 O-2 和 Ar 的混合物中从 Ni 金属靶材上沉积氧化镍薄膜。随着衬底温度的升高，沉积在Si衬底上的氧化镍薄膜表现出从非晶向多晶结构的转变，具有不同的NiO(2 0 0)和(1 1 1)择优取向。在较高温度下沉积的薄膜表现出较高的Ni2+/Ni3+比率。随着衬底温度从室温升高到400℃，氧化镍薄膜的电阻率从(2.8+/-0.1)×10(-2)增加到(8.7+/-0.1)Ω·cm，光学带隙能量从3.65增加到3.88eV。制备了p-氧化镍/n-氧化锌异质结，以证实氧化镍薄膜的p型导电性，并表现出稳定的整流行为。 (c) 2007 Elsevier B.V. 保留所有权利。
Nickel oxide thin films were deposited on fused silica and Si( 1 0 0) substrates at different substrate temperatures ranging from room temperature to 400 degrees C using radio frequency reactive magnetron sputtering from a Ni metal target in a mixture of O-2 and Ar. With the increase of substrate temperature, nickel oxide films deposited on the Si substrates exhibit transition from amorphous to poly-crystalline structures with different preferred orientations of NiO(2 0 0) and (1 1 1). The films deposited at higher temperature exhibit higher Ni2+/Ni3+ ratio. With substrate temperature increasing from room temperature to 400 degrees C, the electrical resistivities of nickel oxide films increase from (2.8 +/- 0.1) x 10(-2) to (8.7 +/- 0.1) Omega cm, and the optical band-gap energies increase from 3.65 to 3.88 eV. A p-nickel oxide/n-zinc oxide heterojunction was fabricated to confirm the p-type conduction of nickel oxide thin film, which exhibited a steadily rectifying behavior. (c) 2007 Elsevier B. V. All rights reserved.