A 1.5GS/s 8b Pipelined-SAR ADC with Output Level Shifting Settling Technique in 14nm CMOS

A 1.5GS/s 8b Pipelined-SAR ADC with Output Level Shifting Settling Technique in 14nm CMOS
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采用 14nm CMOS 的输出电平转换稳定技术的 1.5GS/s 8b 流水线 SAR ADC

DOI:
10.1109/cicc48029.2020.9075942
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发表时间:
2020
期刊:
2020 IEEE Custom Integrated Circuits Conference (CICC)
影响因子:
--
通讯作者:
S. Palermo
S. Palermo
中科院分区:
--
文献类型:
--
作者:
Yuanming Zhu;Shengchang Cai;Shiva Kiran;Yang;Po;S. Hoyos;S. Palermo

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单通道 1.5GS/s 8 位流水线 SAR ADC 利用新颖的输出电平移位 (OLS) 稳定技术来降低功耗并实现动态剩余放大器的低电压运行。该 ADC 由 4 位第一级和 5 位第二级组成,并具有 1 位冗余,以放宽第一级的偏移、增益和稳定要求。采用 OLS 技术,动态残余放大器的级间增益约为 4,而稳定时间仅为传统 CML 放大器的 28%。通过在两个异步级中使用并行比较器,ADC 的转换速度进一步提高。该 ADC 采用 14nm FinFET 技术制造,占据 0.0013mm2 核心面积,并采用 0.8V 电源运行。在奈奎斯特实现 6.6 位 ENOB,功耗为 2.4mW,从而产生 16.7fJ/转换步的 FOM。
A single channel 1.5GS/s 8-bit pipelined-SAR ADC utilizes a novel output level shifting (OLS) settling technique to reduce the power and enable low-voltage operation of the dynamic residue amplifier. The ADC consists of a 4-bit first stage and a 5-bit second stage, with 1-bit redundancy to relax the offset, gain, and settling requirements of the first stage. Employing the OLS technique allows for an inter-stage gain of ~4 from the dynamic residue amplifier with a settling time that is only 28% of a conventional CML amplifier. The ADC's conversion speed is further improved with the use of parallel comparators in the two asynchronous stages. Fabricated in a 14nm FinFET technology, the ADC occupies 0.0013mm2 core area and operates with a 0.8V supply. 6.6-bit ENOB is achieved at Nyquist while consuming 2.4mW, resulting in an FOM of 16.7fJ/conv.-step.
采用 22nm FinFET 的基于 ADC 的抗抖动 40Gb/s 多载波接收器前端
DOI: 10.1109/cicc53496.2022.9772868
发表时间: 2022
期刊: 2022 IEEE Custom Integrated Circuits Conference (CICC
影响因子: --
作者:
Zhu, Yuanming;Gomez Diaz, Julian Camilo;Kumar Kaile, Srujan;Yi, II-Min;Liu, Tong;Hoyos, Sebastian;Palermo, Samuel
通讯作者: Palermo, Samuel
采用 22nm FinFET 封装、具有速度增强型自举开关的 38GS/s 7b 时间交错流水线 SAR ADC
DOI: 10.1109/cicc53496.2022.9772785
发表时间: 2022
期刊: 2022 IEEE Custom Integrated Circuits Conference (CICC
影响因子: --
作者:
Zhu, Yuanming;Liu, Tong;Kaile, Srujan Kumar;Kiran, Shiva;Yi, II-Min;Liu, Ruida;Gomez Diaz, Julian Camilo;Hoyos, Sebastian;Palermo, Samuel
通讯作者: Palermo, Samuel