The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
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DOI：
10.1063/1.3688219
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发表时间：
2012-02-15
影响因子：
3.2
通讯作者：
Schwierz, F.
中科院分区：
文献类型：
--
作者：
Al Mustafa, N.;Granzner, R.;Schwierz, F.
对栅控GaN/AlGaN/GaN异质结中二维载流子气体的形成进行了理论研究。结果表明，在一定条件下，除了在AlGaN/GaN下界面形成二维电子气外，还可以在GaN/AlGaN上界面形成二维空穴气体。计算中使用了薛定谔-泊松求解器和一个简单的分析模型。阐述了二维空穴气体形成的条件。结果表明，一旦产生二维空穴气体，它就会屏蔽共存的二维电子气体，从而导致栅极电压对二维电子气体的影响减弱。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.3688219]
The formation of two-dimensional carrier gases in gated GaN/AlGaN/GaN heterostructures is investigated theoretically. It is shown that under certain conditions a two-dimensional hole gas at the upper GaN/AlGaN interface can be formed in addition to the two-dimensional electron gas at the lower AlGaN/GaN interface. For the calculations, a Schrodinger-Poisson solver and a simple analytical model developed in the present work are used. Conditions for the formation of a two-dimensional hole gas are elaborated. It is shown that once a two-dimensional hole gas is created, it shields the coexisting two-dimensional electron gas which will result in a diminishing effect of the gate voltage on the two-dimensional electron gas. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688219]