Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area
Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area
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DOI：
10.1109/ispsd.2008.4538890
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
D. H. Lu;T. Mizushima;A. Kitamura;N. Iwamuro;N. Fujishima
中科院分区：
文献类型：
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作者：
D. H. Lu;T. Mizushima;A. Kitamura;N. Iwamuro;N. Fujishima
为提高绝缘体上硅(SOI)衬底上绝缘栅双极晶体管(RDP-LIGBT)的电流性能和稳健性，在横向扩散沟道区直接引入逆变掺杂分布(RDP)。该轮廓是通过栅氧化前能量小于180keV的离子注入实现的。通过考虑掩模邻近效应(MPE)，阈值电压得到了很好的控制。新的LIGBT的电流能力是传统LIGBT的1.2-1.6倍。在电压180~210V，电流密度1.4kA/cm~2下，其短路能力为1.2J/cm~2，而传统的为0.192 J/cm~2。
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm2, while its conventional counterpart's is 0.192 J/cm2, at a voltage of 180-210 V and a current density of 1.4 KA/cm2.