GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors-猫眼课题宝

DOI：

10.1109/iedm.2005.1609333

发表时间：

2005-12

期刊：

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

影响因子：

通讯作者：

中科院分区：

其他

文献类型：

作者：

Zhenchuan Yang;Ruonan Wang;Deliang Wang;Baoshun Zhang;K.J. Chen;K. Lau

我们展示了一种可行的技术，GaN基集成微传感器使用的悬浮GaN微结构制造的GaN在图案化的硅技术。研究了GPS技术的基本特性。在AlGaN/GaN外延层上制作了有源器件（HEMT），并进行了定性测试。实验结果表明，悬臂梁上的HEMT器件能够有效地检测悬臂梁上的应力变化

We demonstrated a viable technology for GaN-based integrated microsensors using the suspended GaN microstructures fabricated with GaN on patterned silicon technique. Fundamental characteristics of the GPS technique are investigated. Active devices (HEMT) were fabricated on the AlGaN/GaN cantilevers and qualitatively tested. The experiment shows that the HEMTs on cantilevers can effectively sense the change in the stress induced by deflections applied to the cantilevers

GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors

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