Atomic spin structure of antiferromagnetic domain walls
Atomic spin structure of antiferromagnetic domain walls
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DOI：
10.1038/nmat1646
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发表时间：
2006-06-01
期刊：
影响因子：
41.2
通讯作者：
Wiesendanger, R.
中科院分区：
文献类型：
--
作者：
Bode, M.;Vedmedenko, E. Y.;Wiesendanger, R.
寻找反铁磁性表面上的未补偿磁矩具有重要的技术意义，因为它们是导致交换偏置效应的原因，而交换偏置效应广泛应用于最先进的磁存储设备中。我们用自旋极化扫描隧道显微镜和蒙特卡罗模拟方法研究了W(001)上反铁磁性铁单分子膜中相域壁的原子自旋结构。磁区壁宽只有6-8个原子行。虽然沿<；100>；方向的墙被发现是完全补偿的，但对<；110>；取向的墙的详细分析揭示了没有补偿的垂直磁矩。我们的结果代表了反铁磁性领域的一个重大进展，并可能有助于更好地理解铁磁材料和反铁磁材料之间的磁相互作用。
The search for uncompensated magnetic moments on antiferromagnetic surfaces is of great technological importance as they are responsible for the exchange-bias effect that is widely used in state-of-the-art magnetic storage devices. We have studied the atomic spin structure of phase domain walls in the antiferromagnetic Fe monolayer on W(001) bymeans of spin-polarized scanning tunnelling microscopy and Monte Carlo simulations. The domain wall width only amounts to 6 - 8 atomic rows. Although walls oriented along < 100 > directions are found to be fully compensated, detailed analysis of < 110 >-oriented walls reveals an uncompensated perpendicular magnetic moment. Our result represents a major advance in the field of antiferromagnetism, and may lead to a better understanding of the magnetic interaction between ferromagnetic and antiferromagnetic materials.