Electronic Properties of Doped Semi-conductors
Electronic Properties of Doped Semi-conductors
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DOI：
10.1007/978-3-662-02403-4
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发表时间：
1984-09
期刊：
影响因子：
--
通讯作者：
B. Shklovskii;A. Efros
中科院分区：
文献类型：
--
作者：
B. Shklovskii;A. Efros
第一代半导体不能被恰当地称为”掺杂的“--它们只是非常不纯。不受控制的杂质阻碍了物理定律的发现，使研究人员感到困惑，并引起了新兴的“纯”物理学科倡导者的悲观和嘲笑。“污垢”的最终消失预示着半导体物理学的一个新时代，一个以“纯洁”为座右铭的时代。正是这个时代产生了20世纪50年代的成功，并带来了“半导体电子学”的新技术。纯晶体的实验对半导体理论的发展提供了强有力的推动。新的方法和理论被开发和测试：复杂能带的有效质量方法，杂质态理论和动力学现象理论。这些发展构成了现在所称的半导体物理学。然而，在过去的15年里，出现了向不纯半导体的明显转变，这种转变的发生是因为杂质正是许多主要半导体器件所必需的。技术需要不纯的半导体，这与第一代产品不同，被称为“掺杂”而不是“不纯”，以表明杂质水平现在可以控制在一定程度上。
First-generation semiconductors could not be properly termed" doped-they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning" pure" physical disciplines. The eventual banish ment of the" dirt" heralded a new era in semiconductor physics, an era that had" purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of" semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors-a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed" doped" rather than" impure" to indicate that the impurity levels can now be controlled to a certain extent.