High-performance copper alloy films for barrierless metallization
High-performance copper alloy films for barrierless metallization
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DOI：
10.1016/j.apsusc.2010.07.032
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发表时间：
2010-11
影响因子：
6.7
通讯作者：
C. Lin;W. Leau;C. H. Wu
中科院分区：
文献类型：
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作者：
C. Lin;W. Leau;C. H. Wu
在这项研究中，我们观察到有用的特性V1.1-和V0.8N0.4轴承铜（Cu）薄膜沉积在无阻挡层的硅（Si）衬底上的共溅射工艺。Cu98.8（V0.8N0.4）或Cu（VNx）薄膜在700°C退火1h后电阻率低（2.9μΩcm），漏电流小，在Cu/Si界面没有发生可检测到的反应。这些观察结果证实了Cu（VNx）薄膜的高热稳定性。此外，由于这些膜具有良好的粘附特性，它们可以用于无阻挡层Cu金属化。
In this study, we observe useful properties of V1.1- and V0.8N0.4-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu98.8(V0.8N0.4), or Cu(VNx) for brevity, films exhibit low resistivity (2.9μΩcm) and minimal leakage current after annealing at temperatures up to 700°C for 1h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VNx) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization.