Temperature-induced martensite in magnetic shape memory Fe2MnGa observed by photoemission electron microscopy
Temperature-induced martensite in magnetic shape memory Fe2MnGa observed by photoemission electron microscopy
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DOI：
10.1063/1.3677939
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发表时间：
2012-01
影响因子：
4
通讯作者：
C. Jenkins;A. Scholl;R. Kainuma;H. Elmers;T. Omori
中科院分区：
文献类型：
--
作者：
C. Jenkins;A. Scholl;R. Kainuma;H. Elmers;T. Omori
通过先进光源的Beamline11.0.1.1上的光电子发射显微镜在相变期间观察到在组成Fe2MnGa附近的Heusler形状记忆化合物的单晶中的磁畴结构。该行为与最近在原型Ni2MnGa中观察到的自适应马氏体相相当，尽管最近的工作中的钉扎是外延界面，并且在这项工作中，有效钉扎平面是马氏体变体之间的边界，该马氏体变体以自适应的方式从高温下存在的单晶奥氏体相转变。温度依赖的孪生结构的观测提供的信息之间的磁性和结构演化的耦合行为。
The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe2MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni2MnGa, although the pinning in the recent work is an epitaxial interface and in this work the effective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.