Silicon nanowire sensor array using top-down CMOS technology
Silicon nanowire sensor array using top-down CMOS technology
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DOI：
10.1016/j.sna.2007.12.019
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发表时间：
2008-07-01
影响因子：
4.6
通讯作者：
Kwong, D. L.
中科院分区：
文献类型：
--
作者：
Agarwal, Ajay;Buddharaju, K.;Kwong, D. L.
本文阐述了硅纳米线（SiNW）阵列的制造使用标准的CMOS兼容技术（自上而下），每个阵列由100根线组成，这是单独的电测量其电导和便于统计分析。为了便于实时分析，该阵列集成了微流控技术，用于输送表面改性、缓冲溶液、生物分子/分析物等各种化学品。硅纳米线也被用作两种配置的纳米温度传感器，即电阻温度检测器（RTD）和二极管温度检测器（DTD）类型。RTD型传感器已经显示出类似于7500 ppm/K的电阻温度系数（TCR）值，通过施加反向偏压，该电阻温度系数（TCR）值提高到超过10，000 ppm/K。在293-373 K的温度范围内，使用纳米线的DTD型传感器记录了反向偏置电流的一阶以上变化。这两种类型的纳米温度传感器都是高度敏感的，并且可以与其他生物化学传感器集成在芯片实验室设备中。纳米线阵列的制造细节，特别是作为纳米温度传感器，在这里详细阐述沿着他们的表征。(C)2007 Elsevier B. V.保留所有权利。
The paper elaborates the silicon nanowire (SiNW) arrays fabrication using standard CMOS compatible technologies (top-down) with each array consisting of 100 wires, which are individually electrically measurable for their conductance and facilitating statistical analysis. To facilitate real-time analysis, the arrays are integrated with micro-fluidics for the delivery of various chemicals for surface modification, buffer solutions, biomolecules/analytes, etc. The silicon nanowires are also presented as nano-temperature sensors in two configurations, i.e. as resistance temperature detector (RTD) and diode temperature detector (DTD) types. RTD type sensors have shown temperature coefficient of resistance (TCR) values similar to 7500 ppm/K which are enhanced beyond 10,000 ppm/K by the application of back-bias. DTD type sensors using nanowires have recorded more than one order variation in reverse-bias current, in the temperature range of 293-373 K. Both the types of nano-temperature sensors are highly sensitive and can be integrated with other bio-chemical sensors in lab-on-chip devices. Nanowire array fabrication details in particular as nano-temperature sensor are elaborated here along with their characterization. (C) 2007 Elsevier B.V. All rights reserved.