Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method
Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method
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DOI：
10.4028/www.scientific.net/amm.320.185
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发表时间：
2013-05
期刊：
影响因子：
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通讯作者：
Juan-Yu Yang;Hongbo Sun;Dan Li
中科院分区：
文献类型：
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作者：
Juan-Yu Yang;Hongbo Sun;Dan Li
The graphene (GE) films were fabricated in this paper through the deposition of graphene oxide (GO) sheets onto the quartz slide by means of dip-coating technique, followed by thermal annealing. The growth process and transmittance of the film were monitored by ultraviolet and visible spectrophotometer (UV-Vis), the surface morphology and structure were investigated by Atomic force microscopy (AFM), Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman. The sheet resistance of the film was also tested and results showed that the sheet resistance is about 60 kΩ-1 and the transmittance is as high as 81 % (at 550 nm).
