Molecular dynamics investigation of dislocation pinning by a nanovoid in copper
Molecular dynamics investigation of dislocation pinning by a nanovoid in copper
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DOI：
10.1103/physrevb.72.094105
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发表时间：
2005-09-01
影响因子：
3.7
通讯作者：
Matsui, H
中科院分区：
文献类型：
--
作者：
Hatano, T;Matsui, H
用分子动力学方法研究了铜中刃型位错与空洞之间的相互作用。前导部分和尾部部分的脱钉应力表现出质的不同行为。尾段的脱钉应力随孔洞半径的增大而增大，而尾段的脱钉应力由于两段的相互作用而表现出不同的规律。表征障碍强度的钉扎角在空隙半径超过3nm时接近于零。在临界应力和临界角中没有发现温度依赖性。这归因于没有爬升运动。研究还发现，空洞中心与滑移面之间的距离对钉扎强度的影响是不对称的。
The interaction between an edge dislocation and a void in copper is investigated by means of a molecular dynamics simulation. The depinning stresses of the leading partial and of the trailing partial show qualitatively different behaviors. The depinning stress of the trailing partial increases logarithmically with the void radius, while that of the leading partial behaves in a different manner due to the interaction between two partials. The pinning angle, which characterizes the obstacle strength, approaches zero when the void radius exceeds 3 nm. No temperature dependence is found in the critical stress and the critical angle. This is attributed to an absence of climb motion. It is also found that the distance between the void center and a glide plane asymmetrically affects the pinning strength.