Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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DOI：
10.1063/1.108691
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发表时间：
1993-03
影响因子：
4
通讯作者：
M. Weyers;Michio Sato
中科院分区：
文献类型：
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作者：
M. Weyers;Michio Sato
我们发表了一篇关于GaAs 1 −xNx（0<x<0.016）合金生长的文章。这些层已经通过金属有机化学气相沉积在非常低的压力（25 Pa）下生长。以未裂解的三乙基镓和AsH_3为原料，采用微波远程等离子体分解NH_3为氮源。层的N吸收表现出强烈的依赖于生长温度。V族晶格位的竞争导致在较高的AsH3通量的N含量的减少。随着N含量的增加，GaAsN层的光致发光显示出强烈的红移。
We present a letter on the growth of GaAs1−xNx alloys (0<x<0.016). The layers have been grown by metalorganic chemical vapor deposition at very low pressure (25 Pa). The nitrogen source NH3 has been decomposed in a remote microwave plasma, and uncracked triethylgallium and AsH3 were used. The N uptake into the layers shows a strong dependence on the growth temperature. The competition for the group V lattice sites leads to a reduction of the N content at higher AsH3 fluxes. The GaAsN layers show a strong red shift of the photoluminescence with increasing N content.