Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
复制标题
硅表面应力光反射无损非接触监测技术
DOI：
10.1143/jjap.40.2844
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发表时间：
2000
影响因子：
1.5
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
M. Sohgawa;M. Agata;T. Kanashima;K. Yamashita;K. Eriguchi;A. Fujimoto;M. Okuyama
用光反射谱研究了Si表面的应变和应力。为了产生由N_2气压引起的表面应变，从而改变Si膜的PR谱，制作了Si膜结构。从约3.4eV的PR峰能量获得的跃迁能量与通过弹性分析计算的表面应力成比例。此外，PR光谱被施加到测量应力之间的Si和热氧化物的界面。随着SiO2生长温度的升高，界面应力减小。从我们的实验结果，它被认为是有效的PR光谱作为一种非接触和无损监测技术的Si表面应力。
Strain and stress at the Si surface have been studied by photoreflectance (PR) spectroscopy. A Si diaphragm structure has been fabricated in order to produce the surface strain caused by N2 gas pressure which changes the PR spectra of the Si diaphragm. The transition energy obtained from the PR peak energy of approximately 3.4 eV is proportional to the surface stress, which is calculated by elastic analysis. Additionally, PR spectroscopy was applied to measure stress at the interface between the Si and thermal oxide. As the SiO2 growth temperature increases, the interface stress decreases. From our experimental results, it is considered that PR spectroscopy is effective as a contactless and nondestructive monitoring technique for Si surface stress.