Strain states in semipolar III-nitride semiconductor quantum wells
Strain states in semipolar III-nitride semiconductor quantum wells
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DOI：
10.1063/1.3446297
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发表时间：
2010-06-15
影响因子：
3.2
通讯作者：
Mukai, T.
中科院分区：
文献类型：
--
作者：
Funato, M.;Inoue, D.;Mukai, T.
研究了纤锌矿型III族氮化物半导体量子阱威尔斯（QW）中的应变状态。使用半极性（bar 2上的11（2））和（bar 01上的1（1））InGaN/GaN QW作为测试样品的X射线衍射（XRD）倒易空间映射表明，未应变GaN和赝晶应变InGaN在界面上的倒易晶格矢量的投影一致，表明跨界面的层的连续性。高分辨率透射电子显微镜支持XRD分析。根据实验结果，提取了任意晶向的应变张量元。此外，扩展模型的任意晶体结构的建议。(C)2010年美国物理学会。[doi：10.1063/1.3446297]
Strain states in wurtzite III-nitride semiconductor quantum wells (QWs) are investigated. X-ray diffraction (XRD) reciprocal space mapping using semipolar (11 (2) over bar2) and (1 (1) over bar 01) InGaN/GaN QWs as test samples demonstrates that the projections of reciprocal lattice vectors of unstrained GaN and pseudomorphically strained InGaN on the interface agrees, indicating continuity of layers across the interface. High resolution transmission electron microscopy supports the XRD analysis. Based on the experimental results, strain tensor elements are extracted for arbitrary crystalline orientation. Furthermore, expansion of the model to arbitrary crystal structures is suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3446297]