Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma‐enhanced chemical vapour deposition system
Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma‐enhanced chemical vapour deposition system
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DOI：
10.1002/pssa.201532183
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发表时间：
2015-11
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通讯作者：
A. Taylor;P. Ashcheulov;M. Čada;L. Fekete;P. Hubík;L. Klimša;J. Olejníček;Z. Remeš;I. Jirka;P. Janíček;E. Bedel-Pereira;J. Kopeček;J. Mistrik;V. Mortet
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作者：
A. Taylor;P. Ashcheulov;M. Čada;L. Fekete;P. Hubík;L. Klimša;J. Olejníček;Z. Remeš;I. Jirka;P. Janíček;E. Bedel-Pereira;J. Kopeček;J. Mistrik;V. Mortet
在工艺气体中加入CO2对CVD金刚石层的质量和硼的掺入有显著影响。在本报告中，我们使用微波线性天线等离子体增强化学气相沉积装置（MW - LA - PECVD）研究了在低温（450-500°C）下生长的硼掺杂纳米晶金刚石（BNCD）层中，气相中添加CO2对其性能的影响。实验结果表明，随着CO2浓度的降低，层的电导率增加，这与光学发射光谱（OES）测量的原子硼发射线强度的变化一致。当二氧化碳浓度接近于零时，我们观察到在未播种的衬底上形成了光滑、透明和高电阻的层。该层经透射电镜和X射线光电子显微镜鉴定为碳化硅（SiC）。等离子体中硅的存在被OES证实，这归因于石英管蚀刻。在这种特定的沉积条件下，金刚石生长与SiC生长相互竞争，影响了金刚石层的性能。
The addition of CO2 into the process gas has a significant impact on the quality and the incorporation of boron in CVD diamond layers. In this report we study the effect of CO2 addition in the gas phase on the properties of boron doped nano‐crystalline diamond (BNCD) layers grown at low substrate temperatures (450–500 °C) using a microwave linear antenna plasma‐enhanced chemical vapour deposition apparatus (MW‐LA‐PECVD). Experimental results show an increase in the layers' conductivity with a reduction in CO2 concentration, which is consistent with the variation in the atomic boron emission line intensity measured by optical emission spectroscopy (OES). At CO2 concentrations close to zero, we observed the formation of a smooth, transparent and highly resistive layer on unseeded substrates. This layer has been identified as silicon carbide (SiC) by transmission electron microscopy and X‐ray photoelectron microscopy. The presence of silicon in the plasma is confirmed by OES and it is attributed to quartz tube etching. In this specific deposition condition, diamond growth is in competition with SiC growth, which affects the diamond layer properties.