Room Temperature Electrodeposition of Oriented AgI Crystals
Room Temperature Electrodeposition of Oriented AgI Crystals
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定向 AgI 晶体的室温电沉积
DOI：
10.1149/1.3545059
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发表时间：
2011-04
影响因子：
3.9
通讯作者：
Xu, Zhude
中科院分区：
文献类型：
--
作者：
Chen, Keli;Liu, Run;Wang, Hui;Zheng, Yifan;Xu, Zhude
在室温下，通过在水溶液中电化学产酸，在掺锡氧化铟(ITO)玻璃上电沉积了定向AgI晶体。当释放的氢离子降低ITO工作电极表面的pH时，银离子从银-乙二胺四乙酸二钠络合物中释放出来，然后与碘离子反应生成AgI沉淀物。电沉积的AgI晶体与β/γAgI相混合。用Rietveld法分析了它们的组成，β/γAgI相的比例约为44/56。电沉积AgI晶体的取向与外加电势有关。在较低的外加电位下，β-AgI晶体具有棒状的[002]择优取向，γ-AgI晶体具有三角形的[111]择优取向。测量了电沉积AgI晶体的吸收光谱，电沉积AgI半导体的直接禁带宽度为2.85 eV。
Oriented AgI crystals have been electrodeposited onto tin doped indium oxide (ITO) glass through electrochemical generation of acid in aqueous solutions at room temperature. When the released hydrogen ions lower the pH at the surface of the ITO working electrode, silver ions are set free from the Ag–ethylenediaminetetraacetic acid disodium complex and then react with iodide ions to form AgI deposits. The electrodeposited AgI crystals are mixed with β/γ AgI phases. The composition of them was analyzed by Rietveld method, and the ratio of β/γ AgI phase was about 44/56. The orientation of the electrodeposited AgI crystals is dependent on the applied potentials. At a low applied potential, the obtained AgI crystals have a [002] preferred orientation with a rod shape for β-AgI and a [111] preferred orientation with triangular shape for γ-AgI. The absorption spectra of the electrodeposited AgI crystals were measured, and the electrodeposited AgI semiconductor had a direct bandgap of 2.85 eV.
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影响因子：
8.6
作者：
Keen, DA;Hull, S;Gardner, NJG
通讯作者：
Gardner, NJG
DOI：
10.1103/physreve.79.051601
发表时间：
2009-05
期刊：
Physical review. E, Statistical, nonlinear, and soft matter physics
影响因子：
--
作者：
Lian Guo;Shouliang Zhang;P. Searson
通讯作者：
Lian Guo;Shouliang Zhang;P. Searson
影响因子：
8.6
作者：
M. Dinamani;P. Kamath;R. Seshadri
通讯作者：
M. Dinamani;P. Kamath;R. Seshadri
影响因子：
--
作者：
Xiaofang Shi;Run Liu;Zhu-de Xu
通讯作者：
Xiaofang Shi;Run Liu;Zhu-de Xu
影响因子：
2.8
作者：
Lei Zhao;Yuxia Wang;Zhengwang Chen;Y. Zou
通讯作者：
Lei Zhao;Yuxia Wang;Zhengwang Chen;Y. Zou