Imaging electron detectors for low-voltage TEM
Imaging electron detectors for low-voltage TEM
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用于低压 TEM 的成像电子探测器
DOI：
10.1088/1742-6596/241/1/012009
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Moldovan G
中科院分区：
文献类型：
--
作者：
Moldovan G
在加速电压低于100千伏，低至20千伏的情况下工作的透射式电子显微镜的开发工作越来越多。这项工作旨在阐明传统的间接闪烁体-CCD相机技术是否适合记录由如此低能量的电子形成的图像，以及它的性能与新型直接硅成像探测器的性能相比如何。从调制传递函数和探测量子效率两个方面讨论了这些成像探测器的性能。结果表明，传统闪烁体-CCDS的性能随着电子能量的降低而提高，但在70keV时达到峰值，然后又下降。这种新型的直接曝光探测器有望在更低的能量下获得最佳的成像性能，它能够在非常低的电子能量下实现近100%的探测量子效率。
There is an increasing effort for the development of transmission electron microscopes operating at accelerating voltages of less that 100 kV, down to 20 kV. This work aims to clarify if the technology of conventional indirect scintillator-CCD cameras is suitable to record images formed with electrons of such low energy and how its performance compare to that of novel direct silicon imaging detectors. The performance of these imaging detectors is discussed in terms of modulation transfer function and detective quantum efficiency. It is demonstrated that whilst the performance of conventional scintillator-CCDs improves as the electron energy is dropped, it then peaks at 70 keV and then drops again. Optimum imaging performance at even lower energies is expected for the novel directly exposed detectors, which are capable of near 100% detective quantum efficiency at very low electron energies.
用于电子检测的 CCD 相机的信号和噪声传输特性
DOI：
--
发表时间：
2000
期刊：
Microscopy research and technique (Print)
影响因子：
--
作者：
R. Meyer;A. Kirkland
通讯作者：
A. Kirkland