A CMOS image sensor for high-speed imaging

A CMOS image sensor for high-speed imaging
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用于高速成像的 CMOS 图像传感器

DOI:
10.1109/isscc.2000.839710
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发表时间:
2000
期刊:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)
影响因子:
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通讯作者:
A. Teuner
A. Teuner
中科院分区:
--
文献类型:
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作者:
N. Stevanovic;M. Hillebrand;B. Hosticka;A. Teuner

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获取快速移动物体的图像需要成像仪在短积分时间内具有高光响应性,同步曝光和高速并行读出。以前的CMOS实现在集成时间从75到200 ps的情况下产生大约500帧/s的帧速率,有些只使用滚动快门。该CMOS成像仪在同步曝光变量为1 /spl mu/s和150 /spl mu/s的情况下,积分时间可达到1000帧/s以上。256/spl倍/256像素成像仪采用单多双金属n阱1 /spl mu/m CMOS技术实现。
Acquisition of the images of fast-moving objects requires imagers with high photoresponsivity at short integration times, synchronous exposure, and high-speed parallel readout. Previous CMOS implementations yield frame rates around 500 frames/s at integration times ranging from 75 to 200 ps, and some use rolling shutter only. This CMOS imager achieves more than 1000 frames/s with integration time in synchronous exposure variable between 1 /spl mu/s and 150 /spl mu/s. The 256/spl times/256 pixel imager is realized in a single-poly double-metal n-well 1 /spl mu/m CMOS technology.