Reliable Memristor Based on Ultrathin Native Silicon Oxide
Reliable Memristor Based on Ultrathin Native Silicon Oxide
复制标题
基于超薄原生氧化硅的可靠忆阻器
DOI：
10.1021/acsami.2c03266
复制
发表时间：
2022
影响因子：
9.5
通讯作者：
Shusheng Pan
中科院分区：
文献类型：
--
作者：
Zelin Ma;Jun Ge;Wanjun Chen;Xucheng Cao;Shanqing Diao;Zhiyu Liu;Shusheng Pan
基于二维（2D）材料的忆阻器可以表现出很大的可扩展性和超低功耗，然而，忆阻器电解质的结构和厚度不均匀性降低了器件的生产良率和可靠性。在这里，我们报告说，自限性非晶SiOx（约2.7 nm）提供了一个完美的原子级薄电解质具有高均匀性，具有创纪录的高产量。在物理模型的指导下，我们揭示了SiOx的原子厚度使异常电阻开关转变为模拟准复位模式，其中使用Ag-Au纳米复合电极可以进一步增强灯丝稳定性。这样的皮焦耳忆阻器显示出创纪录的低开关可变性（C2C和D2 D变化分别下降到1.1%和2.6%），在几个微西门子的良好保持，以及高电导更新线性度，构成模拟神经网络的关键指标。此外，稳定的高阻态被发现是一个很好的来源，真随机数的高斯分布。这项工作为大规模生产用于超密度神经形态和安全硬件的Si兼容忆阻器提供了机会。
Memristors based on two-dimensional (2D) materials can exhibit great scalability and ultralow power consumption, yet the structural and thickness inhomogeneity of ultrathin electrolytes lowers the production yield and reliability of devices. Here, we report that the self-limiting amorphous SiOx(∼2.7 nm) provides a perfect atomically thin electrolyte with high uniformity, featuring a record high production yield. With the guidance of physical modeling, we reveal that the atomic thickness of SiOxenables anomalous resistive switching with a transition to an analog quasi-reset mode, where the filament stability can be further enhanced using Ag–Au nanocomposite electrodes. Such a picojoule memristor shows record low switching variabilities (C2C and D2D variation down to 1.1 and 2.6%, respectively), good retention at a few microsiemens, and high conductance-updating linearity, constituting key metrics for analog neural networks. In addition, the stable high-resistance state is found to be an excellent source for true random numbers of Gaussian distribution. This work opens up opportunities in mass production of Si-compatible memristors for ultradense neuromorphic and security hardware.