Adaptive RF Front-Ends Using Electrical-Balance Duplexers and Tuned SAW Resonators
Adaptive RF Front-Ends Using Electrical-Balance Duplexers and Tuned SAW Resonators
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使用电平衡双工器和调谐 SAW 谐振器的自适应射频前端
DOI：
10.1109/tmtt.2017.2728039
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发表时间：
2017
影响因子：
4.3
通讯作者：
J. Craninckx
中科院分区：
文献类型：
--
作者：
B. van Liempd;A. Visweswaran;Saneaki Ariumi;S. Hitomi;P. Wambacq;J. Craninckx
本文提出了一种自适应射频前端（RFFE）架构，该架构使用电平衡双工器（EBD）和调谐表面声波（SAW）谐振器来实现适合LTE频分双工（FDD）工作模式的自适应双频隔离。另外，在带内全双工（IBFD）模式下，EBD直接在射频处消除带内TX自干扰，以增加信道容量。此外，EBD的平衡网络经过优化，可将FDD模式下的TX插入损耗（IL）降低到标称3db限制以下。一个0.18-<inline-formula> < text -math符号="LaTeX">$\mu \text{m}$ </ text -math></inline-formula> SOI CMOS原型实现了EBD、低噪声放大器和saw调谐电容器组。该芯片与saw和匹配组件一起安装到模块基板上。RFFE在FDD模式下实现>50 db双频隔离和2.6 - 3.4 db TX IL，具有+58/+42 dbm TX/RX-path IIP<sub>3</sub>，增加了IBFD-link预算，在两种模式下可处理高达+27.5 dbm的TX功率。
This paper proposes an adaptive RF front-end (RFFE) architecture that uses an electrical-balance duplexer (EBD) and tuned surface acoustic wave (SAW) resonators to enable adaptive dual-frequency isolation suited for LTE’s frequency-division duplex (FDD) mode of operation. Alternatively, in the in-band full-duplex (IBFD) mode, the EBD cancels the in-band TX self-interference directly at RF for increased channel capacity. Furthermore, the EBD’s balance network is optimized to reduce the TX insertion loss (IL) below the nominal 3-dB limit in the FDD mode. A 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SOI CMOS prototype implements the EBD, low-noise amplifier, and SAW-tuning capacitor banks. The chip is mounted to a module substrate together with the SAWs and matching components. The RFFE achieves >50-dB dual-frequency isolation and 2.6–3.4-dB TX IL in FDD mode, has +58/+42-dBm TX/RX-path IIP<sub>3</sub> for an increased IBFD-link budget and handles up to +27.5-dBm TX power in both modes.