Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
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氢封端金刚石 (100) 表面自旋诱发的反常磁阻
DOI：
10.1103/physrevb.94.161301
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and H. Kawarada
中科院分区：
文献类型：
--
作者：
T. Yamaguchi;Y. Sasama;M. Tanaka;H. Takeya;Y. Takano;T. Kageura;and H. Kawarada
我们报告了氢终止（100）取向金刚石表面的磁阻测量，其中离子液体门控场效应晶体管技术被用来使空穴载流子积累。出乎意料的是，在K和T范围内，观察到的磁阻是正的，与先前在具有（111）取向金刚石表面的类似器件中检测到的负磁阻形成鲜明对比。此外，我们还发现：（1）磁电阻比经典的轨道磁电阻大几个数量级;（2）磁电阻几乎与外加磁场的方向无关;（3）对于面内场，磁电阻比服从普适函数.这些结果表明，空穴载流子的自旋自由度对氢端（100）金刚石的表面导电性起着重要的作用。
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces wherein an ionic-liquid-gated field-effect-transistor technique was used to make hole carriers accumulate. Unexpectedly, the observed magnetoresistance is positive within the range ofK andT, in striking contrast to the negative magnetoresistance previously detected for similar devices with (111)-oriented diamond surfaces. Furthermore, we find that (1) the magnetoresistance is orders of magnitude larger than that of the classical orbital magnetoresistance; (2) the magnetoresistance is nearly independent of the direction of the applied magnetic field; and (3) for the in-plane field, the magnetoresistance ratio, defined as, follows a universal function of. These results indicate that the spin degree of freedom of hole carriers plays an important role in the surface conductivity of hydrogen-terminated (100) diamond.