Surface Complexation Modeling of Yb(III) and Cs(I) Sorption on Silica.
Surface Complexation Modeling of Yb(III) and Cs(I) Sorption on Silica.
复制标题
Yb(III) 和 Cs(I) 在二氧化硅上吸附的表面络合模型。
DOI：
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发表时间：
1999
影响因子：
9.9
通讯作者：
Fromage
中科院分区：
文献类型：
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作者：
Marmier;Delisée;Fromage
一个表面络合模型被用来描述镱和铯在二氧化硅表面上的吸附。恒定电容模型给出了这项工作所选择的固溶体界面的描述。建模的第一步是提取表面酸性常数。结果是：第二步包括提取镱和铯的表面络合常数。阳离子的吸附如下所示：对于镱吸附，对于铯吸附，在铯的情况下，钠的吸附是竞争性的，必须考虑：版权所有1999学术出版社。
A surface complexation model is used to describe sorption of ytterbium and cesium on the silica surface. The constant capacitance model gives the description of the solid-solution interface chosen for this work. The first step in the modeling consists of extracting the surface acidity constants. The result is: The second step consists of the extraction of surface complexation constants for both ytterbium and cesium. The sorption of the cations is represented as follows: for the ytterbium sorption, for the cesium sorption, In the case of cesium, the sorption of sodium is competitive and has to be considered: Copyright 1999 Academic Press.