Spin relaxation in asymmetrical heterostructures
Spin relaxation in asymmetrical heterostructures
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DOI：
10.1134/1.1434520
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发表时间：
2000-11
期刊：
影响因子：
0.7
通讯作者：
N. Averkiev;L. Golub;M. Willander
中科院分区：
文献类型：
--
作者：
N. Averkiev;L. Golub;M. Willander
从理论上研究了非对称III-V异质结中D‘yakonov-Perel’机制的电子自旋驰豫。在很大范围的结构参数和温度范围内，都证明了这三个维度的自旋弛豫各向异性。得到了GaAs基异质结和三角形量子阱的自旋弛豫速率的依赖关系。计算表明，实验中实现的异质结参数的自旋弛豫时间相差几个数量级。
Electron spin relaxation by the D’yakonov-Perel’ mechanism is investigated theoretically in asymmetrical III–V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.