Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties
Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties
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DOI：
10.1088/0957-4484/19/48/485705
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发表时间：
2008-12-03
期刊：
影响因子：
3.5
通讯作者：
McIntyre, Paul C.
中科院分区：
文献类型：
--
作者：
Leu, Paul W.;Adhikari, Hemant;McIntyre, Paul C.
我们展示了Ge纳米线（NW）和p-n结阵列的p型掺杂在一个可扩展的垂直对齐的结构，所有的处理低于400摄氏度。这些结构对于大规模生产用于纳米电子学和传感应用的器件的平行阵列是有利的。报道了氧化物封装、化学机械抛光和清洗二氧化硅中垂直锗纳米线的有效方法。重点介绍了在化学机械抛光和清洗氧化物封装Ge纳米线时，避免Ge纳米线在水溶液中选择性氧化和溶解的方法。纳米线掺杂通过外延沉积的B-掺杂的外壳和传输测量表明掺杂浓度的顺序为10（19）cm（-3）。
We demonstrate the p-type doping of Ge nanowires (NWs) and p-n junction arrays in a scalable vertically aligned structure with all processing performed below 400 degrees C. These structures are advantageous for the large scale production of parallel arrays of devices for nanoelectronics and sensing applications. Efficient methods for the oxide encapsulation, chemical mechanical polishing and cleaning of vertical Ge NWs embedded in silicon dioxide are reported. Approaches for avoiding the selective oxidation and dissolution of Ge NWs in aqueous solutions during chemical mechanical polishing and cleaning of oxide-encapsulated Ge NWs are emphasized. NWs were doped through the epitaxial deposition of a B-doped shell and transport measurements indicate doping concentrations on the order of 10(19) cm(-3).