High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric
High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric
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DOI：
10.1088/1367-2630/10/10/103019
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发表时间：
2008-10-16
影响因子：
3.3
通讯作者：
Torma, Paivi
中科院分区：
文献类型：
--
作者：
Rinkio, Marcus;Johansson, Andreas;Torma, Paivi
碳纳米管场效应晶体管（CNT FET）已被提议作为未来纳米电子学的可能构建块。但碳纳米管场效应管的一个挑战是，它们的传输特性似乎随机显示出不同程度的滞后。滞后通常归因于纳米管和栅极之间的电介质层中的电荷捕获。我们发现记忆效应可以通过仔细设计纳米薄层的栅介质来控制。通过使用原子层沉积（ALD）的HfO2和TiO2的三层结构，我们实现了我们的知识，第一CNT FET的一致和窄分布的记忆效应，在其传输特性。该研究包括94个CNT FET样品，提供了一个很好的统计基础上看到在五个不同的CNT栅极配置的滞后。
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO2 and TiO2 in a triple-layer configuration, we achieve to our knowledge the first CNT FETs with consistent and narrowly distributed memory effects in their transfer characteristics. The study includes 94 CNT FET samples, providing a good basis for statistics on the hysteresis seen in five different CNT-gate configurations.