Characterization of SiPM Avalanche Triggering Probabilities

Characterization of SiPM Avalanche Triggering Probabilities
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DOI:
10.1109/ted.2019.2935690
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发表时间:
2019-10-01
影响因子:
3.1
通讯作者:
Zhang, G.
Zhang, G.
中科院分区:
工程技术2区
文献类型:
--
作者:
Gallina, G.;Retiere, F.;Zhang, G.

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硅光电倍增器(SiPM)是对单光子敏感的探测器,用于探测各种物理和医学成像应用中的闪烁和切伦科夫光。SiPM通过盖革模式雪崩放大光生载流子(电子或空穴)来测量单光子。光子探测效率(PDE)是光子在器件的有效体积中被吸收并随后触发雪崩的组合概率。吸收和雪崩触发概率是相关的,因为后者的概率取决于光子被吸收的位置。在这篇文章中,我们介绍了一个物理动机的参数化的雪崩触发概率,描述了PDE的SiPM作为其反向偏置电压的函数,在不同的波长。这种参数化是基于这样一个事实,即在p-on-n SiPM中,诱导的雪崩在紫外(UV)范围内是电子驱动的,而它们在红外范围内越来越多地是空穴驱动的。该模型已成功地应用于两个滨松多像素光子计数器(MPPC)和一个基金会布鲁诺凯斯勒(FBK)的SiPM,它可以扩展到其他SiPM。此外,该模型提供了关键的洞察SiPM内的电场结构,这可以解释现有的设备的局限性,并用于优化未来的SiPM的性能。
Silicon photo-multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The photon detection efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this article, we introduce a physics-motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs, the induced avalanches are electron-driven in the ultraviolet (UV) range, while they become increasingly hole-driven toward the infrared range. The model has been successfully applied to characterize two Hamamatsu multi-pixel photon counters (MPPCs) and one Fondazione-Bruno-Kessler (FBK) SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight into the electric field structure within SiPMs, which can explain the limitation of the existing devices and be used to optimize the performance of the future SiPMs.