High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure
High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure
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DOI：
10.1016/j.jssc.2022.123506
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发表时间：
2022-08
影响因子：
3.3
通讯作者：
Mingze Li;Zhenhua Wang;Dan Han;Xudong Shi;Tingting Li;Xuan P. A. Gao;Zhidong Zhang
中科院分区：
文献类型：
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作者：
Mingze Li;Zhenhua Wang;Dan Han;Xudong Shi;Tingting Li;Xuan P. A. Gao;Zhidong Zhang
拓扑绝缘体的体电子带隙和无隙表面态的共存为光电器件开辟了许多新的机遇。在这里，我们展示了在n型Si衬底上生长的sb2te3垂直纳米板薄膜的合成和光探测响应。sb2te3的小块带隙和表面态导电导致了有效的光吸收和光载流子输运。该器件在350 ~ 1400 nm的宽光谱范围内表现出显著的光响应。其开关速度和开/关比Iph/ idh分别为3 ms和5900，大大优于其他ti光电探测器。由于器件制备简单且与硅技术兼容，非常规结构Sb2Te3/Si异质结构在高性能光电应用中具有很大的前景。
The coexistence of bulk electronic band gap and gapless surface states of topological insulators (TIs) opens up many new opportunities in optoelectronic devices. Here we demonstrate the synthesis and photodetection response of vertical Sb2Te3nanoplate film grown on n-type Si substrates. The small bulk bandgap of Sb2Te3and surface states conduction lead to effective light absorption and photocarrier transport. The device exhibits a significant photoresponse over a broad spectral range between 350 and 1400 nm. The switching speed and on/off ratio Iph/Idare estimated to be 3 ms and 5900, respectively, which are much better than those of other TI-based photodetectors. Given the simple device preparation and compatibility with silicon technology, the unconventional structure Sb2Te3/Si heterostructure holds great promise for high-performance optoelectronic applications.