The benzene molecule as a molecular resonant-tunneling transistor
The benzene molecule as a molecular resonant-tunneling transistor
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DOI：
10.1063/1.126673
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发表时间：
2000-06-05
影响因子：
4
通讯作者：
Lang, ND
中科院分区：
文献类型：
--
作者：
Di Ventra, M;Pantelides, ST;Lang, ND
到目前为止，实验和理论已经证明，单分子可以形成双端器件的核心。在这里，我们报告的第一性原理计算通过苯-1，4-二硫纶分子与第三电容终端（门）的运输。我们结束时，电阻的分子从零栅偏置值上升到一个值大致等于量子电阻（12.9 k Ω）时，通过π * 反键轨道发生共振隧穿。(C)2000年美国物理学会。【S0003-6951（00）04023-7】。
Experiments and theory have so far demonstrated that single molecules can form the core of a two-terminal device. Here we report first-principles calculations of transport through a benzene-1, 4-dithiolate molecule with a third capacitive terminal (gate). We End that the resistance of the molecule rises from its zero-gate-bias value to a value roughly equal to the quantum of resistance (12.9 k Omega) when resonant tunneling through the pi* antibonding orbitals occurs. (C) 2000 American Institute of Physics. [S0003-6951(00)04023-7].