Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
复制标题
DOI：
10.7567/jjap.57.02ba01
复制
发表时间：
2018-02
影响因子：
1.5
通讯作者：
Y. Ohno;H. Yoshida;S. Takeda;Jianbo Liang;N. Shigekawa
中科院分区：
文献类型：
--
作者：
Y. Ohno;H. Yoshida;S. Takeda;Jianbo Liang;N. Shigekawa
使用仅通过机械化学蚀刻制备的无损伤 TEM 样品，通过平面透射电子显微镜 (TEM) 和横截面扫描 TEM 检查室温下通过表面激活键合制造的 Si/GaAs 异质界面的固有微观结构。键合的异质界面包括厚度小于1nm的缺As结晶GaAs层和厚度约为3nm的非晶Si层，其通过在键合前用Ar原子束照射进行表面活化而引入。据推测，界面电阻主要源于前层中的缺As缺陷。
The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature is examined by plane-view transmission electron microscopy (TEM) and cross-sectional scanning TEM using damage-free TEM specimens prepared only by mechanochemical etching. The bonded heterointerfaces include an As-deficient crystalline GaAs layer with a thickness of less than 1 nm and an amorphous Si layer with a thickness of approximately 3 nm, introduced by the irradiation of an Ar atom beam for surface activation before bonding. It is speculated that the interface resistance mainly originates from the As-deficient defects in the former layer.