The effects of high temperature annealing on metal-induced laterally crystallized polycrystalline silicon
The effects of high temperature annealing on metal-induced laterally crystallized polycrystalline silicon
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DOI：
10.1109/16.877167
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发表时间：
2000-11
影响因子：
3.1
通讯作者：
Mingxiang Wang;Z. Meng;M. Wong
中科院分区：
文献类型：
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作者：
Mingxiang Wang;Z. Meng;M. Wong
研究和比较了金属诱导横向晶化多晶硅(MILC)高温退火和未退火的多晶硅。用透射电子显微镜(TEM)观察发现，退火处理使材料质量有了明显的改善。因此，退火后的MILC多晶硅电阻的电学性能得到了极大的提高，表现出接近单晶硅的导电行为。在高温退火的MILC多晶硅上实现的薄膜晶体管具有良好的器件特性，因此在三维器件集成中具有潜在的应用前景。根据透射电子显微镜观察和对MILC过程中的晶粒长大机制的详细考虑，可以用高温处理过程中独特的MILC组织的演变来解释退火热处理的影响。
Metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) with and without a post-crystallization high temperature anneal have been studied and compared. It was revealed using transmission electron microscopy (TEM) that the anneal resulted in significant improvement in the material quality. Consequently, the electrical properties of the annealed MILC poly-Si resistors were greatly enhanced, showing conduction behavior approaching that of single-crystal Si. Thin-film transistors realized on high-temperature annealed MILC poly-Si exhibited excellent device characteristics, thus making them potentially applicable to three-dimensional (3-D) device integration. Based on the TEM observations and a detailed consideration of the mechanism of grain growth during MILC, the effects of the anneal can be explained in terms of the evolution of the unique MILC grain structure during the high temperature treatment.