Effects of film polarities on InN growth by molecular-beam epitaxy
Effects of film polarities on InN growth by molecular-beam epitaxy
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DOI：
10.1063/1.1592309
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发表时间：
2003-07
影响因子：
4
通讯作者：
Ke Xu;A. Yoshikawa
中科院分区：
文献类型：
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作者：
Ke Xu;A. Yoshikawa
研究了分子束外延（MBE）中薄膜极性对InN生长的影响。结果发现，N-极性InN可以生长在更高的温度比In-极性之一。在Ga极性GaN模板上生长的In极性薄膜的最高生长温度限制在500 °C以下，并且表面形貌和晶体质量往往较差，这主要是因为可容忍的低生长温度。而对于在MBE生长的N极性GaN上生长的N极性InN薄膜，生长温度可以高达600 °C。在580 °C下，以N极性生长的InN薄膜获得了台阶状的生长形貌。所得的InN（002）和（102）反射周围的X射线摇摆曲线的半峰全宽分别约为200-250和950-1100弧秒。InN薄膜的光致发光峰值为0.697 eV。N极性生长的InN薄膜的记录霍尔迁移率为1400 cm 2/V s，背景载流子浓度为1.56×1018 cm−3。
Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 °C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 °C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 °C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200–250 and 950–1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm2/V s with a background carrier concentration of 1.56×1018 cm−3 at...