Gap reduction based frequency tuning for AlN capacitive-piezoelectric resonators
Gap reduction based frequency tuning for AlN capacitive-piezoelectric resonators
复制标题
基于间隙减小的 AlN 电容压电谐振器频率调谐
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
C. Nguyen
中科院分区：
文献类型：
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作者：
R. Schneider;T. Naing;T. Rocheleau;C. Nguyen
首次在AlN电容式-压电谐振器上演示了一种能够实现1500ppm或更多频移的压控谐振频率调谐机构。这里的关键推动因素是一个顺应的顶部电极悬架，它随着施加的电压移动，有效地改变与设备串联的电容，从而改变其串联谐振频率。电容-压电AlN微机械谐振器，即那些电极不直接连接到压电材料上的谐振器，已经表现出比附加电极对应的高Q因数，例如，在300 MHz时，Q值为8,800比2,100；是可开/关的；并且，如本工作所示，可以表现出1.0%的机电耦合CX=C0。这种无需外部元件即可调谐频率的新能力现在需要使用片上校正方案来提高精度或减少温度引起的频率漂移，这使得将这项技术应用于频率控制应用变得更加令人信服。
A voltage controlled resonance frequency tuning mechanism, capable of effecting 1,500 ppm frequency shifts or more, is demonstrated for the first time on an AlN capacitive-piezoelectric resonator. The key enabler here is a compliant top electrode suspension that moves with applied voltage to effectively vary capacitance in series with the device, hence changing its series resonance frequency. Capacitive-piezoelectric AlN micromechanical resonators, i.e., those with electrodes not directly attached to the piezoelectric material, already exhibit high Q-factors compared to attached-electrode counterparts, e.g., 8,800 versus 2,100 at 300 MHz; are on/off switchable; and, as shown in this work, can exhibit electromechanical coupling Cx=C0 of 1.0%. This new ability to tune frequency without the need for external components now invites the use of on-chip corrective schemes to improve accuracy or reduce temperature-induced frequency drift, making an even more compelling case to employ this technology for frequency control applications.