Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.
Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.
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光致发光热猝灭分析：高效 p 型氮化物掺杂设计指南
DOI：
10.1038/srep32033
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发表时间：
2016-08-23
影响因子：
4.6
通讯作者：
Zhang Y
中科院分区：
文献类型：
--
作者：
Liu Z;Huang Y;Yi X;Fu B;Yuan G;Wang J;Li J;Zhang Y
提出了一种基于光致发光热猝灭的非接触式诊断技术，用于检查氮化物半导体中p型掺杂剂的杂质能级位置。镁电离能是通过我们开发的唯象速率方程模型提取的。本文报道的诊断技术和分析模型是氮化物高效 p 掺杂设计的优先考虑，也可用于解释 p 型氮化物系统中异常且很少分析的热淬火低特征温度 T0（约 100 K）。以In-Mg共掺杂GaN系统为例来证明我们方法的有效性。此外，通过In-Mg共掺杂实现了高达1.94 × 1018cm−3的空穴浓度，这比我们实验室通常获得的空穴浓度高出近一个数量级。
A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperatureT0(about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018cm−3was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.